fig10

Multicomponent porous metal oxide semiconductors for advanced gas sensing

Figure 10. (A) Pd/Si-mWO3 microspheres-based H2 gas sensing. SEM images of Si-mWO3 (A1); Sensing response to 50 ppm different gases (A2); Response curves toward various H2 concentrations at 210 °C (A3). Figure 10A is quoted with permission from Zhang et al.[5]; (B) TiOx-In2O3-based NO2 gas sensing. Schematic illustration of gas sensing mechanism under light activation (B1); cyclic performance of 5TiOx-In2O3 against 1 ppm NO2 (B2); average response values toward 3 ppm NO2 at dry, 20%, 50%, and 80% RH conditions (B3). Figure 10B is quoted with permission from Park et al.[201]; (C) WO3/Au-based 3-hydroxy-2-butanone gas sensing. Dynamic response-recovery characteristic curves of WO3/Au-based sensors exposed to different concentrations of 3-hydroxy-2-butanone gas (C1); Scheme illustration of MOS-based gas sensors applied in the selective detection of 3-hydroxy-2-butanone (C2). Figure 10C is quoted with permission from Ma et al.[209]; (D) Au@m-WO3 spheres-based isoprene gas sensing. Schematic of a man running on a treadmill (D1). Concentrations of isoprene and gas response of the Au@m-WO3 sensor to the exhaled breath as a function of running time (D2). Figure 10D is quoted with permission from Park et al.[229]. SEM: scanning electron microscope; ppm: parts-per-million.