fig6
Figure 6. Future outlook for zero-power optoelectronic synapses for wearable neuromorphic platforms. Reproduced with permission[50]. Copyright 2025, American Chemical Society. Reproduced with permission[51]. Copyright 2024, John Wiley & Sons. Reproduced with permission[52]. Copyright 2021, Springer Nature. Reproduced with permission[53]. Copyright 2024, American Chemical Society. Reproduced with permission[54]. Copyright 2021, John Wiley & Sons. Reproduced with permission[55]. Copyright 2022, IOP Publishing. Reproduced with permission[56]. Copyright 2020, American Chemical Society. Reproduced with permission[57]. Copyright 2025, John Wiley & Sons. Reproduced with permission[58]. Copyright 2021, Springer Nature. Reproduced with permission[59]. Copyright 2019, American Chemical Society. Reproduced with permission[60]. Copyright 2023, John Wiley & Sons. Reproduced with permission[61]. Copyright 2015, John Wiley & Sons. Reproduced with permission[62]. Copyright 2018, John Wiley & Sons. BHJ: Bulk heterojunction; CTE: charge-transfer emission; OLED: organic light-emitting diode; OPV: organic photovoltaic; PSC: postsynaptic current; ETL: electron transport layer; HTL: hole transport layer; EPSC: excitatory postsynaptic current; IPSC: inhibitory postsynaptic current; ITO: indium tin oxide; IGZO: indium gallium zinc oxide; ST: synaptic transistor; TSM: threshold switching memristor; GND: ground.
